Zenode.ai Logo
Beta
TO-247-3 AD EP
Discrete Semiconductor Products

FCHD125N65S3R0-F155

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 24 A, 125 MΩ, TO-247AD

Deep-Dive with AI

Search across all available documentation for this part.

TO-247-3 AD EP
Discrete Semiconductor Products

FCHD125N65S3R0-F155

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> III, EASY DRIVE, 650 V, 24 A, 125 MΩ, TO-247AD

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFCHD125N65S3R0-F155
Current - Continuous Drain (Id) @ 25°C24 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs46 nC
Input Capacitance (Ciss) (Max) @ Vds1940 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)181 W
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

FCHD125N65S3R0 Series

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.