Specification	NVD4808NT4G

Current - Continuous Drain (Id) @ 25°C	63 A, 10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	11.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1538 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	54.6 W, 1.4 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NVD4808N Series

Power MOSFET 30V 63A 8 mOhm Single N-Channel DPAK

Part	Qualification	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Vgs (Max)	Grade	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type
ON Semiconductor NVD4808NT4G	AEC-Q101	4.5 V	11.5 V	Surface Mount	20 V	Automotive	30 V	10 A 63 A	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.4 W 54.6 W	13 nC	2.5 V	-55 °C	175 ░C	1538 pF	DPAK	8 mOhm	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1461	$ 0.21

Description

General part information

NVD4808N Series

Automotive Power MOSFET. 30V, 63A, 8 mOhm, Single N-Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.