Discrete Semiconductor Products

V8PM10S-M3/I

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DIODE SCHOTTKY 100V 8A TO277A

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Discrete Semiconductor Products

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DIODE SCHOTTKY 100V 8A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	V8PM10S-M3/I

Capacitance @ Vr, F	860 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-PowerDFN, TO-277
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	780 mV

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Capacitance @ Vr, F	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Qualification	Grade
Vishay General Semiconductor - Diodes Division V8PM10S-M3/I	-40 °C	175 ░C	3-PowerDFN TO-277	860 pF	Schottky	100 V	Surface Mount	8 A	780 mV	200 mA 500 ns	200 µA	TO-277A (SMPC)
Vishay General Semiconductor - Diodes Division V8PM10SHM3/I	-40 °C	175 ░C	3-PowerDFN TO-277	860 pF	Schottky	100 V	Surface Mount	8 A	780 mV	200 mA 500 ns	200 µA	TO-277A (SMPC)	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division V8PM10-M3/H	-40 °C	150 °C	3-PowerDFN TO-277		Schottky	100 V	Surface Mount	8 A	750 mV	200 mA 500 ns	60 µA	TO-277A (SMPC)
Vishay General Semiconductor - Diodes Division V8PM10HM3/H	-40 °C	150 °C	3-PowerDFN TO-277		Schottky	100 V	Surface Mount	8 A	750 mV	200 mA 500 ns	60 µA	TO-277A (SMPC)	AEC-Q101	Automotive

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General part information

Diode 100 V 8A Surface Mount TO-277A (SMPC)

Technical documentation and resources