Discrete Semiconductor Products

SFS1604G

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DIODE GEN PURP 200V 16A TO263AB

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 16A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	SFS1604G

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	10 ÁA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	975 mV

Part	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package
Taiwan Semiconductor Corporation SFS1604G	Standard	975 mV	-55 °C	150 °C	80 pF	10 ÁA	Surface Mount	16 A	200 V	200 mA 500 ns	35 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)

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General part information

Diode 200 V 16A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources