Specification	ATP213-TL-H

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds	3150 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	ATPAK (2 leads+tab)
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

ATP213 Series

N-Channel Power MOSFET, 60V, 50A, 16mOhm, Single ATPAK

Part	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor ATP213-TL-H	60 V	N-Channel	20 V	4 V	10 V	ATPAK (2 leads+tab)	3150 pF	150 °C	Surface Mount	50 A	16 mOhm	MOSFET (Metal Oxide)	50 W	ATPAK	58 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

ATP213 is N-Channel Power MOSFET, 60V, 50A, 16mOhm, Single ATPAK for General-Purpose Switching Device Application.