Discrete Semiconductor Products
RJP020N06T100
ActiveRohm Semiconductor
POWER MOSFET, N CHANNEL, 60 V, 2 A, 0.165 OHM, SOT-89, SURFACE MOUNT
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
RJP020N06T100
ActiveRohm Semiconductor
POWER MOSFET, N CHANNEL, 60 V, 2 A, 0.165 OHM, SOT-89, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RJP020N06T100 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 160 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-243AA |
| Power Dissipation (Max) | 500 mW |
| Rds On (Max) @ Id, Vgs | 240 mOhm |
| Supplier Device Package | MPT3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RJP020N06 Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources