Specification	NTMFS6H824NT1G

Current - Continuous Drain (Id) @ 25°C	103 A, 19 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	2470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.8 W, 115 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTMFS6H824N Series

Power MOSFET, Single N-Channel, 80V, 103A, 4.5mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Mounting Type	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor NTMFS6H824NT1G	2470 pF	4 V	4.5 mOhm	6 V 10 V	5-DFN (5x6)	8-SOFL	19 A 103 A	3.8 W 115 W	-55 °C	175 ░C	8-PowerTDFN 5 Leads	20 V	38 nC	N-Channel	Surface Mount	MOSFET (Metal Oxide)	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.