Discrete Semiconductor Products

FGB40N6S2T

Obsolete

IGBT 600V 75A TO-263

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Discrete Semiconductor Products

Obsolete

IGBT 600V 75A TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	FGB40N6S2T

Current - Collector (Ic) (Max) [Max]	75 A
Current - Collector Pulsed (Icm)	180 A
Gate Charge	35 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	290 W
Supplier Device Package	TO-263 (D2PAK)
Switching Energy	195 µJ, 115 µJ
Td (on/off) @ 25°C	8 ns
Td (on/off) @ 25°C	35 ns
Test Condition	390 V, 15 V, 3 Ohm, 20 A
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Supplier Device Package	Gate Charge	Current - Collector (Ic) (Max) [Max]	Switching Energy	Vce(on) (Max) @ Vge, Ic	Test Condition	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Power - Max [Max]	Current - Collector Pulsed (Icm)
ON Semiconductor FGB40N6S2T	TO-263 (D2PAK)	35 nC	75 A	115 µJ 195 µJ	2.7 V	3 Ohm 15 V 20 A 390 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C	600 V	8 ns	35 ns	290 W	180 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 600 V 75 A 290 W Surface Mount TO-263 (D2PAK)

Technical documentation and resources