Discrete Semiconductor Products

V10P12-M3/86A

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DIODE SCHOTTKY 120V 10A TO277A

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Discrete Semiconductor Products

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DIODE SCHOTTKY 120V 10A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	V10P12-M3/86A

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	400 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-PowerDFN, TO-277
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If	820 mV

Part	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division V10P12-M3/86A	Schottky	400 µA	10 A	TO-277A (SMPC)	120 V	3-PowerDFN TO-277	200 mA 500 ns	150 °C	-40 °C	Surface Mount	820 mV
Vishay General Semiconductor - Diodes Division V10P12-M3/87A	Schottky	400 µA	10 A	TO-277A (SMPC)	120 V	3-PowerDFN TO-277	200 mA 500 ns	150 °C	-40 °C	Surface Mount	820 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 120 V 10A Surface Mount TO-277A (SMPC)

Technical documentation and resources