Discrete Semiconductor Products

RD3G500GNTL

NRND

MOSFET N-CH 40V 50A TO252

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Discrete Semiconductor Products

NRND

MOSFET N-CH 40V 50A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	RD3G500GNTL

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	22800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	4.9 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Technology
Rohm Semiconductor RD3G500GNTL	Surface Mount	4.9 mOhm	N-Channel	4.5 V 10 V	40 V	150 °C	20 V	22800 pF	50 A	35 W	TO-252	2.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	31 nC	MOSFET (Metal Oxide)

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General part information

N-Channel 40 V 50A (Tc) 35W (Tc) Surface Mount TO-252

Technical documentation and resources

No documents available