Discrete Semiconductor Products

N0413N-ZK-E1-AY

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MOSFET N-CH 40V 100A TO263

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Discrete Semiconductor Products

Active

MOSFET N-CH 40V 100A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	N0413N-ZK-E1-AY

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	5550 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	119 W, 1.5 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Package / Case	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Renesas Electronics Corporation N0413N-ZK-E1-AY	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	40 V	100 A	150 °C	1.5 W 119 W	20 V	3.3 mOhm	TO-263 (D2PAK)	10 V	5550 pF	N-Channel	Surface Mount	100 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 100A (Ta) 1.5W (Ta), 119W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources