Discrete Semiconductor Products

RJK0355DPA-01#J0B

Obsolete

MOSFET N-CH 30V 30A 8WPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 30A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0355DPA-01#J0B

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	860 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	10.7 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Supplier Device Package	Operating Temperature
Renesas Electronics Corporation RJK0355DPA-01#J0B	860 pF	10.7 mOhm	30 V	N-Channel	25 W	8-PowerWDFN	6.3 nC	30 A	MOSFET (Metal Oxide)	Surface Mount	8-WPAK	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2500	$ 1.35

General part information

The RJK0355DPA is a N Channel Power MOSFET.

Technical documentation and resources