Discrete Semiconductor Products

BC560BTA

Obsolete

ON Semiconductor

TRANS PNP 45V 0.1A TO92-3

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DocumentsDatasheet

Discrete Semiconductor Products

BC560BTA

Obsolete

ON Semiconductor

TRANS PNP 45V 0.1A TO92-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BC560BTA

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	500 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	650 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

BC556(LEGACY%20FAIRCHILD) Series

PNP Epitaxial Silicon Transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Transistor Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor BC560	45 V	Through Hole	500 mW	110	150 °C	150 MHz	650 mV	15 nA	TO-226-3 TO-92-3	100 mA	TO-92-3	PNP
ON Semiconductor BC560BTA	45 V	Through Hole	500 mW	200	150 °C	150 MHz	650 mV	15 nA	TO-226-3 TO-92-3	100 mA	TO-92-3	PNP
ON Semiconductor BC560BU	45 V	Through Hole	500 mW	110	150 °C	150 MHz	650 mV	15 nA	TO-226-3 TO-92-3	100 mA	TO-92-3	PNP
ON Semiconductor BC560CTA	45 V	Through Hole	500 mW	420	150 °C	150 MHz	650 mV	15 nA	TO-226-3 TO-92-3	100 mA	TO-92-3	PNP
ON Semiconductor BC560ABU	45 V	Through Hole	500 mW	110	150 °C	150 MHz	650 mV	15 nA	TO-226-3 TO-92-3	100 mA	TO-92-3	PNP
ON Semiconductor BC560CG	45 V	Through Hole	625 mW	380		250 MHz	250 mV	15 nA	TO-226-3 TO-92-3 Long Body	100 mA	TO-92	PNP	TO-226	-55 °C	150 °C
ON Semiconductor BC560CZL1G	45 V	Through Hole	625 mW	380		250 MHz	250 mV	15 nA	Formed Leads TO-226-3 TO-92-3 Long Body	100 mA	TO-92	PNP	TO-226	-55 °C	150 °C
ON Semiconductor BC560CBU	45 V	Through Hole	500 mW	420	150 °C	150 MHz	650 mV	15 nA	TO-226-3 TO-92-3	100 mA	TO-92-3	PNP
ON Semiconductor BC560CZL1	45 V	Through Hole	625 mW	380		250 MHz	250 mV	15 nA	Formed Leads TO-226-3 TO-92-3 Long Body	100 mA	TO-92	PNP	TO-226	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BC556(LEGACY%20FAIRCHILD) Series

The PNP Epitaxial Silicon Transistor is designed for use in amplifier and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Documents

Technical documentation and resources