Discrete Semiconductor Products

FFB2222A

Obsolete

NPN MULTI-CHIP GENERAL PURPOSE AMPLIFIER

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Discrete Semiconductor Products

Obsolete

NPN MULTI-CHIP GENERAL PURPOSE AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	FFB2222A

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	300 mW
Supplier Device Package	SC-88 (SC-70-6)
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	40 V

NPN Multi-Chip General Purpose Amplifier

Part	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Mounting Type	Frequency - Transition
ON Semiconductor FFB2222A	-55 °C	150 °C	2 NPN (Dual)	40 V	100	1 V	500 mA	6-TSSOP SC-88 SOT-363	SC-88 (SC-70-6)	0.01 µA	300 mW	Surface Mount	300 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.