Specification	DMT6006SPS-13

Current - Continuous Drain (Id) @ 25°C	98 A
Current - Continuous Drain (Id) @ 25°C	16.2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27.9 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	89.3 W, 2.45 W
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	PowerDI5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

DMT6006SPS Series

60V N-Channel Enhancement Mode MOSFET

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Diodes Inc DMT6006SPS-13	8-PowerTDFN	98 A	16.2 A	10 V	27.9 nC	20 V	N-Channel	PowerDI5060-8	4 V	2.45 W 89.3 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	60 V	6.2 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.37
		5000	$ 0.34
		7500	$ 0.33
		12500	$ 0.33

Description

General part information

DMT6006SPS Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.