Discrete Semiconductor Products

2SK3430-AZ

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

POWER MOSFETS FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3430-AZ

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds	2800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	84 W, 1.5 W
Rds On (Max) @ Id, Vgs	7.3 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Power MOSFETs for Automotive

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature	Power Dissipation (Max)
Renesas Electronics Corporation 2SK3430-AZ	20 V	2800 pF	N-Channel	40 V	TO-220-3	TO-220AB	MOSFET (Metal Oxide)	4 V	10 V	7.3 mOhm	50 nC	Through Hole	150 °C	1.5 W 84 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Nch Single Power MOSFET 40V 80A 7. 3mohm MP-25/TO-220AB Automotive

Technical documentation and resources