Discrete Semiconductor Products

MCU20P10-TP

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POWER FIELD-EFFECT TRANSISTOR,

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Discrete Semiconductor Products

Active

POWER FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	MCU20P10-TP

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC
Input Capacitance (Ciss) (Max) @ Vds	2100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Micro Commercial Components MCU20P10-TP	-55 °C	150 °C	Surface Mount	61 nC	P-Channel	MOSFET (Metal Oxide)	70 W	20 A	3 V	20 V	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 mOhm	10 V	2100 pF	DPAK
Micro Commercial Components MCU20N10A-TP-HF	-55 °C	150 °C	Surface Mount	53 nC	N-Channel	MOSFET (Metal Oxide)	47 W	20 A	2.5 V	20 V	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	45 mOhm	4.5 V 10 V	2014 pF	TO-252 (DPAK)
Micro Commercial Components MCU20N10A-TP	-55 °C	150 °C	Surface Mount	53 nC	N-Channel	MOSFET (Metal Oxide)	47 W	20 A	2.5 V	20 V	100 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	45 mOhm	4.5 V 10 V	2014 pF	TO-252 (DPAK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 20A (Tj) 70W Surface Mount DPAK

Technical documentation and resources