Discrete Semiconductor Products

R6024VNXC7G

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600V 13A TO-220FM, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

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Discrete Semiconductor Products

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600V 13A TO-220FM, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

Technical Specifications

Parameters and characteristics for this part

Specification	R6024VNXC7G

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	153 mOhm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

600V 13A TO-220FM, PrestoMOS™ with integrated high-speed diode

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature	Power Dissipation (Max) [Max]	Technology	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)
Rohm Semiconductor R6024VNXC7G	6.5 V	153 mOhm	38 nC	10 V 15 V	600 V	N-Channel	13 A	Through Hole	150 °C	70 W	MOSFET (Metal Oxide)	TO-220FM	TO-220-3 Full Pack	1800 pF	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

R6024VNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.

Technical documentation and resources