Discrete Semiconductor Products

S8PM-M3/I

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8A, 1000V, STD , SM RECT, SMPC

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Discrete Semiconductor Products

Active

8A, 1000V, STD , SM RECT, SMPC

Technical Specifications

Parameters and characteristics for this part

Specification	S8PM-M3/I

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	3-PowerDFN, TO-277
Reverse Recovery Time (trr)	5 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-277A (SMPC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Speed	Speed	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type
Vishay General Semiconductor - Diodes Division S8PM-M3/I	Standard Recovery >500ns	200 mA	3-PowerDFN TO-277	60 pF	TO-277A (SMPC)	5 µA	Standard	2 A	1.1 V	5 µs	1000 V	150 °C	-55 °C	Surface Mount
Vishay General Semiconductor - Diodes Division S8PM-M3/H	Standard Recovery >500ns	200 mA	3-PowerDFN TO-277	60 pF	TO-277A (SMPC)	5 µA	Standard	2 A	1.1 V	5 µs	1000 V	150 °C	-55 °C	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 2A Surface Mount TO-277A (SMPC)

Technical documentation and resources