Specification	ADRF5160BCPZ-R7

Circuit	SPDT
Frequency Range (Max)	4 GHz
Frequency Range (Min)	700 MHz
IIP3	70 dBm
Impedance	50 Ohm
Insertion Loss	0.9 dB
Isolation	35 dB
Mounting Type	Surface Mount
Operating Temperature (Max)	105 °C
Operating Temperature (Min)	-40 °C
P1dB	47 dBm
Package / Case	CSP, 32-VFQFN Exposed Pad
Package Length	5 mm
Package Name	32-LFCSP
Package Width	5 mm
RF Type	General Purpose
Test Frequency	4 GHz
Topology	Reflective
Voltage - Supply (Maximum)	5.4 V
Voltage - Supply (Minimum)	4.5 V

ADRF5160 Series

High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz

Part	For Use With/Related Products	Supplied Contents	Contents	Type	Frequency (Min)	Frequency (Max)	Utilized IC / Part	IIP3	Package Length	Package Name	Package Width	Package / Case	Topology	Mounting Type	Circuit	RF Type	Test Frequency	Impedance	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Frequency Range (Max)	Frequency Range (Min)	Isolation	Insertion Loss	P1dB	Operating Temperature (Min)	Operating Temperature (Max)
Analog Devices Inc./Maxim Integrated ADRF5160-EVALZ	ADRF5160	Board(s)	Board	SPDT Switch	700 MHz	4 GHz	ADRF5160
Analog Devices Inc./Maxim Integrated ADRF5160BCPZ								70 dBm	5 mm	32-LFCSP	5 mm	32-VFQFN Exposed Pad CSP	Reflective	Surface Mount	SPDT	General Purpose	4 GHz	50 Ohm	5.4 V	4.5 V	4 GHz	700 MHz	35 dB	0.9 dB	47 dBm	-40 °C	105 °C
Analog Devices Inc./Maxim Integrated ADRF5160BCPZ-R7								70 dBm	5 mm	32-LFCSP	5 mm	32-VFQFN Exposed Pad CSP	Reflective	Surface Mount	SPDT	General Purpose	4 GHz	50 Ohm	5.4 V	4.5 V	4 GHz	700 MHz	35 dB	0.9 dB	47 dBm	-40 °C	105 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tape & Reel (TR)	500	$ 37.05	<1d

CAD

3D models and CAD resources for this part

Description

General part information

ADRF5160 Series

The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches.The ADRF5160 comes in a RoHS compliant, compact 32-lead, 5 mm × 5 mm LFCSP.ApplicationsWireless infrastructureMilitary and high reliability applicationsTest equipmentPin diode replacement

Documents

Technical documentation and resources

ADRF5160: High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz Data Sheet (Rev.0)

Data Sheet