Discrete Semiconductor Products

PN918 TIN/LEAD

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RF BIPOLAR TRANSISTORS NPN 30VCBO 15VCEO 3VEBO 50MA 200MW

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Discrete Semiconductor Products

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RF BIPOLAR TRANSISTORS NPN 30VCBO 15VCEO 3VEBO 50MA 200MW

Technical Specifications

Parameters and characteristics for this part

Specification	PN918 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Gain	15 dB
Mounting Type	Through Hole
Noise Figure (dB Typ @ f)	6 dB
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	15 V

Part	Noise Figure (dB Typ @ f)	Mounting Type	Supplier Device Package	Package / Case	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Gain	Transistor Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]
Central Semiconductor Corp PN918 TIN/LEAD	6 dB	Through Hole	TO-92-3	TO-226AA	TO-226-3 TO-92-3	20	15 dB	NPN	150 °C	-65 °C	50 mA	15 V	625 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.16
Mouser	N/A	5000	$ 0.16
		10000	$ 0.15

General part information

RF BIPOLAR TRANSISTORS NPN 30VCBO 15VCEO 3VEBO 50MA 200MW

Technical documentation and resources