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TO-247-3 AC EP
Discrete Semiconductor Products

IRFP064NPBF

Active
INFINEON

POWER MOSFET, GENERAL PURPOSE, N CHANNEL, 55 V, 110 A, 0.008 OHM, TO-247AC, THROUGH HOLE

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TO-247-3 AC EP
Discrete Semiconductor Products

IRFP064NPBF

Active
INFINEON

POWER MOSFET, GENERAL PURPOSE, N CHANNEL, 55 V, 110 A, 0.008 OHM, TO-247AC, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFP064NPBF
Current - Continuous Drain (Id) @ 25°C110 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4000 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)200 W
Rds On (Max) @ Id, Vgs8 mOhm
Supplier Device PackageTO-247AC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1004$ 3.14
Tube 1$ 3.74
10$ 2.45
100$ 1.72
500$ 1.41
1000$ 1.31
2000$ 1.28
MouserN/A 1$ 3.16
10$ 2.87
25$ 2.07
100$ 1.68
400$ 1.37
1200$ 1.30
5200$ 1.28

Description

General part information

IRFP064 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.