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TO-247-3 AC EP
Discrete Semiconductor Products

IRFP7530PBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 60 V, 195 A, 0.00165 OHM, TO-247AC, THROUGH HOLE

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TO-247-3 AC EP
Discrete Semiconductor Products

IRFP7530PBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 60 V, 195 A, 0.00165 OHM, TO-247AC, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFP7530PBF
Current - Continuous Drain (Id) @ 25°C195 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]411 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]13703 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)341 W
Rds On (Max) @ Id, Vgs0.002 mOhm
Supplier Device PackageTO-247
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 3.53
10$ 3.33
25$ 2.28
100$ 1.96
400$ 1.71
1200$ 1.50
DigikeyN/A 6209$ 4.37
Tube 1$ 4.42
25$ 2.52
100$ 2.07
500$ 1.71
1000$ 1.62
MouserN/A 1$ 4.06
10$ 3.89
25$ 2.23
100$ 1.93
400$ 1.59
NewarkEach 1$ 4.35
10$ 3.62
25$ 2.88
50$ 2.68
100$ 2.47
250$ 2.26
800$ 2.04

Description

General part information

IRFP7530 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.