Discrete Semiconductor Products

SPP77N06S2-12

Obsolete

MOSFET N-CH 55V 80A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 80A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP77N06S2-12

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	158 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	FET Type	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]
INFINEON SPP77N06S2-12	MOSFET (Metal Oxide)	158 W	2350 pF	4 V	20 V	PG-TO220-3-1	N-Channel	TO-220-3	Through Hole	55 V	60 nC	12 mOhm	10 V	175 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.82

General part information

N-Channel 55 V 80A (Tc) 158W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources