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INFINEON SPB80P06PGATMA1
Discrete Semiconductor Products

SPB80P06PGATMA1

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INFINEON

POWER MOSFET, P CHANNEL, 60 V, 80 A, 0.021 OHM, TO-263 (D2PAK), SURFACE MOUNT

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INFINEON SPB80P06PGATMA1
Discrete Semiconductor Products

SPB80P06PGATMA1

Active
INFINEON

POWER MOSFET, P CHANNEL, 60 V, 80 A, 0.021 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSPB80P06PGATMA1
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]173 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]5033 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)340 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs23 mOhm
Supplier Device PackagePG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.87
10$ 3.25
100$ 2.63
500$ 2.34
Digi-Reel® 1$ 3.87
10$ 3.25
100$ 2.63
500$ 2.34
N/A 1890$ 4.41
Tape & Reel (TR) 1000$ 2.00
2000$ 1.89
5000$ 1.81
NewarkEach (Supplied on Cut Tape) 1$ 3.95
10$ 2.95
25$ 2.77
50$ 2.58
100$ 2.39
250$ 2.27
500$ 2.13
1000$ 1.80

Description

General part information

SPB80P06 Series

The SPB80P06P G is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.

Documents

Technical documentation and resources