Discrete Semiconductor Products

SIRA02DP-T1-GE3

Active

MOSFET N-CH 30V 50A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 50A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA02DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	117 nC
Input Capacitance (Ciss) (Max) @ Vds	6150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5 W, 71.4 W
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id [Max]
Vishay General Semiconductor - Diodes Division SIRA02DP-T1-GE3	PowerPAK® SO-8	-16 V 20 V	117 nC	6150 pF	MOSFET (Metal Oxide)	Surface Mount	50 A	4.5 V 10 V	N-Channel	-55 °C	150 °C	30 V	5 W 71.4 W	PowerPAK® SO-8	2.2 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 50A (Tc) 5W (Ta), 71.4W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources