Specification	DS1230Y-200+

Access Time	200 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization	32K x 8
Memory Size	32 kB
Memory Type	Non-Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	28-DIP Module (0.600", 15.24mm)
Supplier Device Package	28-EDIP
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.5 V
Write Cycle Time - Word, Page	200 ns

DS1230Y Series

Part	Technology	Memory Format	Supplier Device Package	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page	Memory Interface	Mounting Type	Memory Type	Memory Organization	Access Time	Memory Size	Write Cycle Time - Word, Page [y]	Write Cycle Time - Word, Page [x]
Analog Devices Inc./Maxim Integrated DS1230YP-70IND+	NVSRAM (Non-Volatile SRAM)	NVSRAM	34-PowerCap Module	34-PowerCap™ Module	5.5 V	4.5 V	85 C	-40 ¯C	70 ns	Parallel	Surface Mount	Non-Volatile	32K x 8	70 ns	32 kB
Analog Devices Inc./Maxim Integrated DS1230Y-100	NVSRAM (Non-Volatile SRAM)	NVSRAM	28-EDIP	28-DIP Module (0.600" 15.24mm)	5.5 V	4.5 V	70 °C	0 °C		Parallel	Through Hole	Non-Volatile	32K x 8	100 ns	32 kB	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1230Y-120IND+	NVSRAM (Non-Volatile SRAM)	NVSRAM	28-EDIP	28-DIP Module (0.600" 15.24mm)	5.5 V	4.5 V	85 C	-40 ¯C	120 ns	Parallel	Through Hole	Non-Volatile	32K x 8	120 ns	32 kB
Analog Devices Inc./Maxim Integrated DS1230Y-70	NVSRAM (Non-Volatile SRAM)	NVSRAM	28-EDIP	28-DIP Module (0.600" 15.24mm)	5.5 V	4.5 V	70 °C	0 °C	70 ns	Parallel	Through Hole	Non-Volatile	32K x 8	70 ns	32 kB
Analog Devices Inc./Maxim Integrated DS1230Y-100+	NVSRAM (Non-Volatile SRAM)	NVSRAM	28-EDIP	28-DIP Module (0.600" 15.24mm)	5.5 V	4.5 V	70 °C	0 °C		Parallel	Through Hole	Non-Volatile	32K x 8	100 ns	32 kB	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1230YP-100	NVSRAM (Non-Volatile SRAM)	NVSRAM	34-PowerCap Module	34-PowerCap™ Module	5.5 V	4.5 V	70 °C	0 °C		Parallel	Surface Mount	Non-Volatile	32K x 8	100 ns	32 kB	100 ns	100 ns
Analog Devices Inc./Maxim Integrated DS1230Y-200+	NVSRAM (Non-Volatile SRAM)	NVSRAM	28-EDIP	28-DIP Module (0.600" 15.24mm)	5.5 V	4.5 V	70 °C	0 °C	200 ns	Parallel	Through Hole	Non-Volatile	32K x 8	200 ns	32 kB
Analog Devices Inc./Maxim Integrated DS1230Y-120+	NVSRAM (Non-Volatile SRAM)	NVSRAM	28-EDIP	28-DIP Module (0.600" 15.24mm)	5.5 V	4.5 V	70 °C	0 °C	120 ns	Parallel	Through Hole	Non-Volatile	32K x 8	120 ns	32 kB
Analog Devices Inc./Maxim Integrated DS1230Y-200IND+	NVSRAM (Non-Volatile SRAM)	NVSRAM	28-EDIP	28-DIP Module (0.600" 15.24mm)	5.5 V	4.5 V	85 C	-40 ¯C	200 ns	Parallel	Through Hole	Non-Volatile	32K x 8	200 ns	32 kB
Analog Devices Inc./Maxim Integrated DS1230Y-85+	NVSRAM (Non-Volatile SRAM)	NVSRAM	28-EDIP	28-DIP Module (0.600" 15.24mm)	5.5 V	4.5 V	70 °C	0 °C	85 ns	Parallel	Through Hole	Non-Volatile	32K x 8	85 ns	32 kB

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	42	$ 40.83	1m+
		156	$ 40.83
	Tube	1	$ 37.17	1m+
		10	$ 33.00
		25	$ 31.47
		50	$ 30.36
		100	$ 29.28
		250	$ 27.91

Description

General part information

DS1230Y Series

The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Documents

Technical documentation and resources

DS1230AB-DS1230Y: 256k Nonvolatile SRAM Data Sheet (Rev.4)

Data Sheet