Discrete Semiconductor Products

IPZ60R037P7XKSA1

Obsolete

MOSFET N-CH 650V 76A TO247-4

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 76A TO247-4

Technical Specifications

Parameters and characteristics for this part

Specification	IPZ60R037P7XKSA1

Current - Continuous Drain (Id) @ 25°C	76 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	121 nC
Input Capacitance (Ciss) (Max) @ Vds	5243 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	255 W
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	PG-TO247-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
INFINEON IPZ60R125P6FKSA1	20 V	Through Hole	70 nC	TO-247-4	37.9 A	219 W	600 V	3330 pF	150 °C	-55 °C	10 V	4.5 V	99 mOhm	PG-TO247-4	MOSFET (Metal Oxide)	N-Channel
INFINEON IPZ60R037P7XKSA1	20 V	Through Hole		TO-247-4	76 A	255 W	650 V		150 °C	-55 °C	10 V	4 V	37 mOhm	PG-TO247-4	MOSFET (Metal Oxide)	N-Channel	5243 pF	121 nC
INFINEON IPZ60R041P6FKSA1	20 V	Through Hole	170 nC	TO-247-4	77.5 A	481 W	600 V		150 °C	-55 °C	10 V	4.5 V	41 mOhm	PG-TO247-4	MOSFET (Metal Oxide)	N-Channel	8180 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 76A (Tc) 255W (Tc) Through Hole PG-TO247-4

Technical documentation and resources