Discrete Semiconductor Products

IPB35N12S3L26ATMA1

Obsolete

MOSFET N-CHANNEL_100+

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CHANNEL_100+

Technical Specifications

Parameters and characteristics for this part

Specification	IPB35N12S3L26ATMA1

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	71 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	26.3 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.4 V

Part	Qualification	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Grade	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type
INFINEON IPB35N12S3L26ATMA1	AEC-Q101	120 V	4.5 V 10 V	PG-TO263-3-2	Surface Mount	MOSFET (Metal Oxide)	175 °C	-55 °C	20 V	Automotive	35 A	2.4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	26.3 mOhm	30 nC	71 W	N-Channel

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General part information

N-Channel 120 V 35A (Tc) 71W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources