Discrete Semiconductor Products
CUS10S30,H3F
ActiveToshiba Semiconductor and Storage
DIODES, 20 V/1 A SCHOTTKY BARRIER DIODE, SOD-323(USC)
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Discrete Semiconductor Products
CUS10S30,H3F
ActiveToshiba Semiconductor and Storage
DIODES, 20 V/1 A SCHOTTKY BARRIER DIODE, SOD-323(USC)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CUS10S30,H3F |
|---|---|
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 500 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 125 °C |
| Package / Case | SOD-323, SC-76 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | USC |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 30 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 230 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 129506 | $ 0.21 | |
Description
General part information
CUS10S30 Series
Diodes, 20 V/1 A Schottky Barrier Diode, SOD-323(USC)
Documents
Technical documentation and resources