CDBGBSC101200-G

Obsolete

DIODE ARR SIC SCHOT 1200V TO247

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Discrete Semiconductor Products

Obsolete

DIODE ARR SIC SCHOT 1200V TO247

Technical Specifications

Parameters and characteristics for this part

Specification	CDBGBSC101200-G

Current - Average Rectified (Io) (per Diode)	18 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Technology	Diode Configuration	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Mounting Type	Reverse Recovery Time (trr)	Speed
Comchip Technology CDBGBSC101200-G	TO-247	1.2 kV	1.7 V	100 µA	SiC (Silicon Carbide) Schottky	1 Pair Common Cathode	TO-247-3	175 ░C	-55 C	18 A	Through Hole	0 ns	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 1200 V 18A (DC) Through Hole TO-247-3

Technical documentation and resources

No documents available