Specification	UPA2735GR-E1-AT

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	195 nC
Input Capacitance (Ciss) (Max) @ Vds	6250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerSOIC (0.173", 4.40mm Width)
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

UPA2735GR Series

Pch Power MOSFET -30V -16A 5mohm SOP-8 / SOIC-8

Part	Technology	Mounting Type	FET Type	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Package / Case
Renesas Electronics Corporation UPA2735GR-E1-AT	MOSFET (Metal Oxide)	Surface Mount	P-Channel	150 °C	4.5 V 10 V	30 V	8-PowerSOIC (0.173" 4.40mm Width)	195 nC	6250 pF	8-SOP	1.1 W	5 mOhm	20 V
Renesas Electronics Corporation UPA2735GR-E1-AX	MOSFET (Metal Oxide)	Surface Mount	P-Channel	150 °C	4.5 V 10 V	30 V	8-SOIC	195 nC	6250 pF	8-SOP	2.5 W	5 mOhm	20 V	0.154 in	3.9 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources