Discrete Semiconductor Products

SSM3K116TU,LF

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MOSFET N-CH 30V 2.2A UFM

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Discrete Semiconductor Products

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MOSFET N-CH 30V 2.2A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K116TU,LF

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	245 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	100 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.1 V

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Mounting Type	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM3K116TU,LF	30 V	UFM	-55 °C	150 °C	12 V	245 pF	MOSFET (Metal Oxide)	2.2 A	1.1 V	2.5 V 4.5 V	100 mOhm	N-Channel	Surface Mount	500 mW

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General part information

N-Channel 30 V 2.2A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources