Specification	SSM3K116TU,LF

Current - Continuous Drain (Id) @ 25°C	2.2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	245 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.1 V

SSM3K116TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 2.2 A, 0.1 Ω@4.5V, SOT-323F(UFM)

Part	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package
Toshiba Semiconductor and Storage SSM3K116TU,LF	Surface Mount	1.1 V	N-Channel	100 mOhm	245 pF	2.2 A	2.5 V	4.5 V	MOSFET (Metal Oxide)	150 °C	-55 °C	12 V	30 V	500 mW	UFM

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 2.2 A, 0.1 Ω@4.5V, SOT-323F(UFM)

Technical documentation and resources