Specification	PBSS4560PA,115

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	210
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-PowerUDFN
Power - Max [Max]	2.1 W
Supplier Device Package	3-HUSON
Supplier Device Package [x]	2
Supplier Device Package [y]	2
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	290 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

PBSS4560PA Series

60 V, 6 A NPN low V_CEsat (BISS) transistor

Part	Frequency - Transition	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Mounting Type	Operating Temperature	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Nexperia USA Inc. PBSS4560PA,115	150 MHz	NPN	60 V	2.1 W	290 mV	3-PowerUDFN	Surface Mount	150 °C	3-HUSON	2	2	100 nA	210

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3425	$ 0.89

Description

General part information

PBSS4560PA Series

NPN low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.