Discrete Semiconductor Products

IPI90N06S404AKSA2

Obsolete

MOSFET N-CHANNEL_55/60V

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Discrete Semiconductor Products

Obsolete

MOSFET N-CHANNEL_55/60V

Technical Specifications

Parameters and characteristics for this part

Specification	IPI90N06S404AKSA2

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	128 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	10400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Qualification	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Grade	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Technology
INFINEON IPI90N06S404AKSA2	60 V	AEC-Q101	150 W	4 mOhm	175 °C	-55 °C	90 A	10400 pF	128 nC	20 V	Automotive	Through Hole	4 V	10 V	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	MOSFET (Metal Oxide)

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General part information

N-Channel 60 V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources