Discrete Semiconductor Products

SI6913DQ-T1-E3

LTB

MOSFET 2P-CH 12V 4.9A 8TSSOP

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Discrete Semiconductor Products

LTB

MOSFET 2P-CH 12V 4.9A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6913DQ-T1-E3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	28 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	830 mW
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	900 mV

Part	Rds On (Max) @ Id, Vgs	FET Feature	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Package / Case [custom]	Package / Case [custom]	Configuration	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]
Vishay General Semiconductor - Diodes Division SI6913DQ-T1-GE3	21 mOhm	Logic Level Gate	830 mW	28 nC	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	8-TSSOP	8-TSSOP	0.173 "	4.4 mm	2 P-Channel	4.9 A	12 V	900 mV
Vishay General Semiconductor - Diodes Division SI6913DQ-T1-E3	21 mOhm	Logic Level Gate	830 mW	28 nC	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	8-TSSOP	8-TSSOP	0.173 "	4.4 mm	2 P-Channel	4.9 A	12 V	900 mV

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General part information

Mosfet Array 12V 4.9A 830mW Surface Mount 8-TSSOP

Technical documentation and resources