Discrete Semiconductor Products

SICAC0860P-TP

LTB

DIODE SIL CARB 650V 8A DFN5060

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Discrete Semiconductor Products

LTB

DIODE SIL CARB 650V 8A DFN5060

Technical Specifications

Parameters and characteristics for this part

Specification	SICAC0860P-TP

Capacitance @ Vr, F	346 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	36 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	8-PowerTDFN
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DFN5060
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

Part	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Package / Case
MCC (Micro Commercial Components) SICAC0860P-TP	8 A	36 µA	500 mA	175 ░C	-55 °C	1.6 V	346 pF	650 V	SiC (Silicon Carbide) Schottky	DFN5060	0 ns	Surface Mount	8-PowerTDFN
MCC (Micro Commercial Components) SICAC0860P-TP	8 A	36 µA	500 mA	175 ░C	-55 °C	1.6 V	346 pF	650 V	SiC (Silicon Carbide) Schottky	DFN5060	0 ns	Surface Mount	8-PowerTDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 8A Surface Mount DFN5060

Technical documentation and resources