PSC1065J-QJ
Active650 V, 10 A SIC SCHOTTKY DIODE IN D2PAK R2P FOR AUTOMOTIVE APPLICATIONS
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PSC1065J-QJ
Active650 V, 10 A SIC SCHOTTKY DIODE IN D2PAK R2P FOR AUTOMOTIVE APPLICATIONS
Technical Specifications
Parameters and characteristics for this part
| Specification | PSC1065J-QJ |
|---|---|
| null | |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 209 | $ 5.22 | |
Description
General part information
PSC1065J-Q Series
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
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