Specification	SSM3K17FU,LF

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	7 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	20 Ohm
Supplier Device Package	USM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	7 V
Vgs(th) (Max) @ Id	1.5 V

SSM3K17FU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 50 V, 0.1 A, 20 Ω@4V, SOT-323(USM)

Part	Operating Temperature	FET Type	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM3K17FU,LF	150 °C	N-Channel	Surface Mount	7 V	100 mA	1.5 V	MOSFET (Metal Oxide)	USM	50 V	SC-70 SOT-323	7 pF	4 V	2.5 V	20 Ohm	150 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1	$ 0.26

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 50 V, 0.1 A, 20 Ω@4V, SOT-323(USM)

Technical documentation and resources