Discrete Semiconductor Products

2N4125 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT 30VCBO 30VCEO 4.0VEBO 200MA 625MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT 30VCBO 30VCEO 4.0VEBO 200MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N4125 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type
Central Semiconductor Corp 2N4125 TIN/LEAD	200 mA	50 nA	625 mW	30 V	200 MHz	PNP	50	TO-92-3	400 mV	TO-226AA	TO-226-3 TO-92-3	150 °C	-65 °C	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.21
Mouser	N/A	5000	$ 0.20

General part information

BIPOLAR TRANSISTORS - BJT 30VCBO 30VCEO 4.0VEBO 200MA 625MW

Technical documentation and resources