Discrete Semiconductor Products

IPI45N06S4L08AKSA3

Obsolete

MOSFET N-CHANNEL_55/60V

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Discrete Semiconductor Products

Obsolete

MOSFET N-CHANNEL_55/60V

Technical Specifications

Parameters and characteristics for this part

Specification	IPI45N06S4L08AKSA3

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	4780 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	71 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.2 V

Part	Power Dissipation (Max)	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPI45N06S4L08AKSA3	71 W	MOSFET (Metal Oxide)	Through Hole	4780 pF	Automotive	4.5 V 10 V	2.2 V	16 V	I2PAK TO-262-3 Long Leads TO-262AA	8.2 mOhm	64 nC	N-Channel	175 °C	-55 °C	60 V	45 A	AEC-Q101
INFINEON IPI45N06S409AKSA1	71 W	MOSFET (Metal Oxide)	Through Hole		Automotive	10 V	4 V	20 V	I2PAK TO-262-3 Long Leads TO-262AA			N-Channel	175 °C	-55 °C	60 V	45 A	AEC-Q101	3785 pF	PG-TO262-3	9.4 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 45A (Tc) 71W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources