Discrete Semiconductor Products

PMV164ENEAR

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MOSFET N-CH 60V 1.6A TO236AB

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Discrete Semiconductor Products

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MOSFET N-CH 60V 1.6A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV164ENEAR

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	5.8 W, 640 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	218 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	FET Type	Mounting Type	Grade	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Qualification	Power Dissipation (Max)	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP PMV164ENEAR	N-Channel	Surface Mount	Automotive	1.6 A	110 pF	218 mOhm	SC-59 SOT-23-3 TO-236-3	4.5 V 10 V	-55 °C	175 ░C	3.8 nC	TO-236AB	60 V	MOSFET (Metal Oxide)	20 V	AEC-Q101	5.8 W 640 mW	2.7 V

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General part information

N-Channel 60 V 1.6A (Ta) 640mW (Ta), 5.8W (Tc) Surface Mount TO-236AB

Technical documentation and resources