Discrete Semiconductor Products

UMF21N-TP

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	UMF21N-TP

Current - Collector (Ic) (Max)	500 mA, 100 mA
Current - Collector Cutoff (Max)	100 nA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	270, 30
Frequency - Transition	260 MHz, 250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-363, SC-88, 6-TSSOP
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	SOT-363
Transistor Type	1 NPN - Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV, 300 mV
Voltage - Collector Emitter Breakdown (Max)	12 V, 50 V

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Package / Case	Transistor Type	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Current - Collector Cutoff (Max)	Frequency - Transition
MCC (Micro Commercial Components) UMF21N-TP	Surface Mount	12 V 50 V	100 mA 500 mA	250 mV 300 mV	30 270	SOT-363	6-TSSOP SC-88 SOT-363	1 NPN - Pre-Biased 1 PNP	10 kOhms	500 nA	100 nA	250 MHz 260 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3000	$ 0.10

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN - Pre-Biased, 1 PNP 12V, 50V 500mA, 100mA 260MHz, 250MHz 150mW Surface Mount SOT-363

Technical documentation and resources