Discrete Semiconductor Products

IKW30N65EL5XKSA1

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IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 PINS

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Discrete Semiconductor Products

Active

IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 PINS

Technical Specifications

Parameters and characteristics for this part

Specification	IKW30N65EL5XKSA1

Current - Collector (Ic) (Max) [Max]	85 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	168 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	227 W
Supplier Device Package	PG-TO247-3
Switching Energy	1.35 mJ, 470 µJ
Td (on/off) @ 25°C	308 ns
Td (on/off) @ 25°C	33 ns
Test Condition	30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	1.35 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Current - Collector Pulsed (Icm)	Mounting Type	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Gate Charge	Switching Energy	Test Condition	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]
INFINEON IKW30N65EL5XKSA1	650 V	PG-TO247-3	120 A	Through Hole	1.35 V	308 ns	33 ns	168 nC	1.35 mJ 470 µJ	10 Ohm 15 V 30 A 400 V	TO-247-3	175 °C	-40 °C	85 A	227 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT, 85 A, 1.05 V, 227 W, 650 V, TO-247, 3 PINS

Technical documentation and resources