Discrete Semiconductor Products
BYC30M-650PQ
ActiveWeEn Semiconductors
BYC30M-650P/TO220-2L/STANDARD MA
Discrete Semiconductor Products
BYC30M-650PQ
ActiveWeEn Semiconductors
BYC30M-650P/TO220-2L/STANDARD MA
Technical Specifications
Parameters and characteristics for this part
| Specification | BYC30M-650PQ |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage | 30 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -65 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220-2L |
| Reverse Recovery Time (trr) | 38 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 2.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 6000 | $ 0.51 | <4d |
CAD
3D models and CAD resources for this part
Description
General part information
BYC30M-650PQ
Diode 650 V 30A Through Hole TO-220-2L
Documents
Technical documentation and resources