Discrete Semiconductor Products

VS-60APH03L-N3

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DIODE GEN PURP 300V 60A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 300V 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-60APH03L-N3

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	42 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.45 V

Part	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type
Vishay General Semiconductor - Diodes Division VS-60APH03L-N3	42 ns	60 A	175 ░C	-55 °C	200 mA 500 ns	10 µA	TO-247AD	Standard	TO-247-3	300 V	1.45 V	Through Hole

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General part information

Diode 300 V 60A Through Hole TO-247AD

Technical documentation and resources