Discrete Semiconductor Products

PBLS4002V,115

Obsolete

TRANS NPN PREBIAS/PNP SOT666

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN PREBIAS/PNP SOT666

Technical Specifications

Parameters and characteristics for this part

Specification	PBLS4002V,115

Current - Collector (Ic) (Max)	500 mA, 100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30, 150
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4700 Ohms
Supplier Device Package	SOT-666
Transistor Type	1 NPN Pre-Biased, 1 PNP
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V
Voltage - Collector Emitter Breakdown (Max) [Min]	40 V

Part	Frequency - Transition	Resistor - Emitter Base (R2)	Current - Collector (Ic) (Max)	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Min]	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Supplier Device Package
Freescale Semiconductor - NXP PBLS4002V,115	300 MHz	4700 Ohms	100 mA 500 mA	Surface Mount	50 V	40 V	1 µA	300 mW	1 NPN Pre-Biased 1 PNP	4.7 kOhms	30 150	SOT-563 SOT-666	SOT-666

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 40V 100mA, 500mA 300MHz 300mW Surface Mount SOT-666

Technical documentation and resources

No documents available