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PNE650200EJ-QJ
Discrete Semiconductor Products

PNE650200EJ-QJ

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Nexperia USA Inc.

650 V, 20 A HYPERFAST RECOVERY RECTIFIER

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PNE650200EJ-QJ
Discrete Semiconductor Products

PNE650200EJ-QJ

Active
Nexperia USA Inc.

650 V, 20 A HYPERFAST RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

SpecificationPNE650200EJ-QJ
Capacitance @ Vr, F13 pF
Current - Average Rectified (Io)28 A
Current - Reverse Leakage @ Vr5 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction175 °C
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), Variant
QualificationAEC-Q101
Reverse Recovery Time (trr)30 ns
Speed500 ns, 200 mA
Supplier Device PackageD2PAK R2P
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If [Max]2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 775$ 2.65

Description

General part information

PNE650200EJ-Q Series

High power density, hyperfast switching recovery rectifier with high-efficiency planar technology, encapsulated in D2PAK Real-2-Pin (SOT8018).