Specification	PSMN1R8-30MLHX

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds	3125 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	106 W
Rds On (Max) @ Id, Vgs	2.1 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

PSMN1R8-30MLH Series

N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package
Nexperia USA Inc. PSMN1R8-30MLHX	4.5 V 10 V	175 °C	-55 °C	30 V	N-Channel	Surface Mount	106 W	2.2 V	150 A	58 nC	MOSFET (Metal Oxide)	3125 pF	20 V	2.1 mOhm	LFPAK33

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	23	$ 2.70

Description

General part information

PSMN1R8-30MLH Series

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSSleakage and high efficiency. Rated to 150 A and optimizedwith low gate resistance (RG) for fast-switching applications.