
FM24CL16B-DG
ActiveFERROELECTRIC RAM (FRAM), 16 KBIT, 2K X 8BIT, I2C, 1 MHZ, 2.7 V TO 3.65 V SUPPLY, DFN-8
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FM24CL16B-DG
ActiveFERROELECTRIC RAM (FRAM), 16 KBIT, 2K X 8BIT, I2C, 1 MHZ, 2.7 V TO 3.65 V SUPPLY, DFN-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | FM24CL16B-DG |
|---|---|
| Access Time | 550 ns |
| Memory Format | FRAM |
| Memory Interface | I2C |
| Memory Organization | 2K x 8 |
| Memory Size | 2 KB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-DFN (4x4.5) |
| Technology | FRAM (Ferroelectric RAM) |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FM24CL16B-DG Series
FM24CL16B-DG is a 16-Kbit non-volatile memory in 8 pin DFN-EP package. A F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. Unlike EEPROM, the FM24CL16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24CL16B is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM.
Documents
Technical documentation and resources